Condensation of WF, occurs on silicon without
dissociation at 120 K and below [16, 171 but reacts
dissociatively at room temperature and above [7, 141. Yu
et al. [7, 181 have reported that WF, has a very high initial
(i.e., low-coverage) sticking coefficient, 0.3, on Si(100)
from 20&70O0C. The gas chemisorbs dissociatively on both
Si(100) [7] and Si(l11) [14]. High-resolution photoemission
experiments by Yarmoff and McFeely [14] have revealed
the formation of a range of fluorosilyl compounds
SiFx (x = 1, 2, 3) on the Si( 11 1) surface when the surface
is saturated with WF, at room temperature. The behavior
of WF, on Si(100) is qualitatively similar [7]. The
saturation coverage on Si(100) has been estimated to be
about 1.5 x 10'4/cm2, which is much less than the number
of first-layer silicon atoms on Si(100) (6.8 X 10'4/cmZ)T. his
is because every WF, molecule contains six fluorine
atoms, and the reaction stops when all of the upper-layer
silicon atoms have reacted with fluorine atoms.
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